Integrated circuit: The integration of multiple electronic components on a substrate to complete a certain circuit or system function.

IC Chip/Component Number Industry Cycle

No integration 1 before 1960

Small Scale (SSI) 2 to 50 Early 1960 s

Medium Scale (MSI) 50 to 5000 1960 s to early 1970 s

Large-scale (LSI) 5000 to the early to late 100,020 1970 s

Very large scale (VLSI) 100000 to 1,000,020 late 1970 s to late 1980 s

Very large scale (ULSI) is larger than 1,000,020 the late 1990 s to the present

Wafer preparation (wafer preparation)

Wafer fabrication (Silicon Wafer Manufacturing)

Wafer test/sort

Assembly and packaging (assembly and packaging)

Final test

Development direction: improve chip performance-improve speed (reduce key size, improve integration, research and development using new materials), reduce power consumption.

Improve chip reliability-strict control of pollution.

Reduced cost-reduced line width, increased wafer diameter.

Moore's Law states that the integration of ICs will double every other year.

1975 was revised to: IC integration will double every one and a half years.

Natural oxidation layer: If exposed to air at room temperature or deionized water containing dissolved oxygen, the surface of the silicon wafer will be oxidized. This thin oxide layer is called the native oxide layer. The initial natural oxide layer growth on the silicon wafer begins with moisture. When the surface of the silicon wafer is exposed to the air, dozens of layers of water molecules are adsorbed on the silicon wafer and penetrate into the silicon surface within one second, which causes the silicon surface to oxidize even at room temperature.

The problems caused by the natural oxide layer are:

① It will hinder other process steps, such as the growth of single crystal thin films and the growth of ultra-thin oxide layers on silicon wafers.

Another problem is that the contact area of the metal conductor, if there is an oxide layer, will increase the contact resistance, reduce or even prevent the current flow.

③ has a great influence on semiconductor performance and reliability

1. Silicon wafer manufacturing technician: responsible for operating silicon wafer manufacturing equipment. Some equipment maintenance and basic fault inquiry of process and equipment.

2. Equipment technician: Inquire about faults and maintain advanced equipment systems to ensure correct operation of equipment during wafer manufacturing.

3. Equipment Engineer: Engaged in determining equipment design parameters and optimizing equipment performance for silicon wafer production.

4. Process engineer: Analyze the performance of manufacturing processes and equipment to determine optimal parameter settings.

5. Laboratory technician: engaged in the development of laboratory work, the establishment and testing.

6: Yield/Failure Analysis Technician: Engaged in work related to defect analysis, such as preparing materials to be analyzed and operating analysis equipment to determine the root cause of problems in the silicon wafer manufacturing process.

7. Yield Improvement Engineer: Collect and analyze yield and test data to improve wafer manufacturing performance.

Facilities Engineer: Provide engineering support for the infrastructure of chemical materials, air purification and common equipment in silicon wafer manufacturing plants.

"More Moore" refers to the continuous shrinking of chip feature sizes.

Geometrically refers to the continued shrinking of feature sizes in the horizontal and vertical directions of the wafer in order to improve density, performance, and reliability.

This is associated with 3D structure improvement and other non-geometric process technologies and the use of new materials to affect the electrical properties of the wafer.

"More Than Moore" refers to providing added value to end users in a variety of ways, not necessarily reducing feature size, such as moving from system component level to 3D integration or precision package level (SiP) or chip level (SoC).

Minimum feature size, known as critical dimension (Critical Dimension,CD)CD is often used as a measure of process difficulty.