Products
Products
SiC Devices Silicon carbide SiC is a compound semiconductor material composed of silicon Si and carbon C, usually in 4H-SiC crystal type. Its insulation breakdown field strength is 10 times that of Si, energy gap is 3 times that of Si, thermal conductivity is 3 times that of Si, and saturation drift speed is 2 times that of Si. It is a very superior power electronic device material than Si.
High Reliability SL19N120A High Voltage MOSFET Manufacturer Package:TO-247-3 VDSS(V):1200V ID@TC=25℃(A):19A RDSON(Ω):160mΩ@20V,10A PD(W):134W P/N:N -width VRRM(V): IF(A): VF Typ(V): PD@TC=25℃(W): Package:
Reliable Factory SL12005B SiC Schottky Barrier Diodes TO-220-2 Package: VDSS(V): ID@TC=25℃(A): RDSON(Ω): PD(W): P/N: VRRM(V):1200V IF(A):5A VF Typ(V):1.8V PD@TC=25℃(W):110W Package:TO-220-2
Factory Direct SL12010B SiC Schottky Diodes TO-220-2 Package: VDSS(V): ID@TC=25℃(A): RDSON(Ω): PD(W): P/N: VRRM(V):1200V IF(A):10.5A VF Typ(V):1.8V PD@TC=25℃(W):153W Package:TO-220-2
Manufacturer SL12015B SiC Schottky Barrier Rectifiers TO-247-2 Package: VDSS(V): ID@TC=25℃(A): RDSON(Ω): PD(W): P/N: VRRM(V):1200V IF(A):15A VF Typ(V):1.8V PD@TC=25℃(W):220W Package:TO-247-2
Professional Supplier SL12020B SiC Schottky Rectifiers TO-247-2 Package: VDSS(V): ID@TC=25℃(A): RDSON(Ω): PD(W): P/N: VRRM(V):1200V IF(A):22A VF Typ(V):1.8V PD@TC=25℃(W):272W Package:TO-247-2
Cost-effective SL12030B SiC Power Schottky Diodes TO-247-2 Package: VDSS(V): ID@TC=25℃(A): RDSON(Ω): PD(W): P/N: VRRM(V):1200V IF(A):30A VF Typ(V):1.8V PD@TC=25℃(W):288W Package:TO-247-2
High Reliability SL12040B SiC Schottky Diode Rectifier TO-247-2 Package: VDSS(V): ID@TC=25℃(A): RDSON(Ω): PD(W): P/N: VRRM(V):1200V IF(A):40A VF Typ(V):1.8V PD@TC=25℃(W):385W Package:TO-247-2

Beidou/GPS Antenna Consultation

Board-end Socket Consultation

Connector Consultation

Get Product Information