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SiC Schottky Diode
With high-frequency Schottky barrier diode structure, SiC SBD achieves more than 600V high voltage, while maximum withstand voltage of silicon SBD is only 200V or so, and its on-state voltage drop is much lower than that of the silicon fast recovery diode. its shutdown recovery time is smaller, hence shutdown loss is lower, resulting in lower electromagnetic interference EMI. The use of SiC SBD to replace the mainstream product silicon fast recovery diode FRD, can significantly reduce the total loss, improve the efficiency of the power supply, and through the high-frequency operation to achieve the miniaturization of passive components such as inductors and capacitors, and electromagnetic interference EMI is lower. Silicon carbide SBD can be widely used in air conditioners, power supplies, inverters in photovoltaic power generation systems, motor-drag systems for electric vehicles and fast chargers.
Reliable Factory SL12005B SiC Schottky Barrier Diodes TO-220-2
VRRM（V）：1200V
IF（A）：5A
VF Typ（V）：1.8V
PD@TC=25℃（W）：110W
Package：TO-220-2
Factory Direct SL12010B SiC Schottky Diodes TO-220-2
VRRM（V）：1200V
IF（A）：10.5A
VF Typ（V）：1.8V
PD@TC=25℃（W）：153W
Package：TO-220-2
Manufacturer SL12015B SiC Schottky Barrier Rectifiers TO-247-2
VRRM（V）：1200V
IF（A）：15A
VF Typ（V）：1.8V
PD@TC=25℃（W）：220W
Package：TO-247-2
Professional Supplier SL12020B SiC Schottky Rectifiers TO-247-2
VRRM（V）：1200V
IF（A）：22A
VF Typ（V）：1.8V
PD@TC=25℃（W）：272W
Package：TO-247-2
Cost-effective SL12030B SiC Power Schottky Diodes TO-247-2
VRRM（V）：1200V
IF（A）：30A
VF Typ（V）：1.8V
PD@TC=25℃（W）：288W
Package：TO-247-2
High Reliability SL12040B SiC Schottky Diode Rectifier TO-247-2
VRRM（V）：1200V
IF（A）：40A
VF Typ（V）：1.8V
PD@TC=25℃（W）：385W
Package：TO-247-2
| 1200V | 5A | 1.8V | 110W | TO-220-2 | |
| 1200V | 10.5A | 1.8V | 153W | TO-220-2 | |
| 1200V | 15A | 1.8V | 220W | TO-247-2 | |
| 1200V | 22A | 1.8V | 272W | TO-247-2 | |
| 1200V | 30A | 1.8V | 288W | TO-247-2 | |
| 1200V | 40A | 1.8V | 385W | TO-247-2 |
Shenzhen Kinghelm Electronics Co., Ltd.
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