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The P-Channel MOSFET has a Vds rating of -20V and a maximum current (Id) of -2.8A. It features an RDS(on) of 112mΩ at 4.5V Vgs and 2.8A Id, with a threshold voltage (Vgs(th)) of 1V at 250μA. The MOSFET has a power dissipation (Pd) of 400mW.
●1.8 V RDSon rated for Low Voltage Gate Drive
●Very fast switching
●Trench MOSFET technology
Description
A P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
Features
●1.8 V RDSon rated for Low Voltage Gate Drive
●Very fast switching
●Trench MOSFET technology
Applications
●Relay driver
●High-speed line driver
●High-side loadswitch
●Switching circuits
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Longevity
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