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High Reliability SL2301 P-Channel Power MOSFET Manufacturer

The P-Channel MOSFET has a Vds rating of -20V and a maximum current (Id) of -2.8A. It features an RDS(on) of 112mΩ at 4.5V Vgs and 2.8A Id, with a threshold voltage (Vgs(th)) of 1V at 250μA. The MOSFET has a power dissipation (Pd) of 400mW.

●1.8 V RDSon rated for Low Voltage Gate Drive

●Very fast switching

●Trench MOSFET technology

Description

A P-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

Features

●1.8 V RDSon rated for Low Voltage Gate Drive

Very fast switching

Trench MOSFET technology

Applications

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits


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