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The N-Channel MOSFET has a Vdss of 30V and a maximum Id of 3A. Its RDS(on) is 8Ω at 10V Vgs with a 3A Id. The threshold voltage (Vgs(th)) is 1.5V at 250μA, and it supports a maximum power dissipation (Pd) of 350mW.
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
Product Summary
● VDS 30V
● ID 300mA
● RDS(ON)( at VGS=10V) <8.0ohm
● RDS(ON)( at VGS=4.5V) <13.0ohm
● ESD Protected Up to 2.5KV (HBM)
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface:TTL/CMOS
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.






