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Cost-effective 2SK3018W N-Channel Power MOSFET SOT-323 Manufacturer

The N-Channel MOSFET has a Vdss of 30V and a maximum Id of 3A. Its RDS(on) is 8Ω at 10V Vgs with a 3A Id. The threshold voltage (Vgs(th)) is 1.5V at 250μA, and it supports a maximum power dissipation (Pd) of 350mW.

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

Product Summary
● VDS 30V
● ID 300mA
● RDS(ON)( at VGS=10V) <8.0ohm
● RDS(ON)( at VGS=4.5V) <13.0ohm
● ESD Protected Up to 2.5KV (HBM)

General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage

Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface:TTL/CMOS



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