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30V 150A SL30N02D N-Channel Enhancement MOSFET TO-252

The SL30N02D Metal Oxide-Silicon Field Effect Transistor features a VDS of 30V and ID of 150A. It has an RDS(ON) of 2.8mΩ (Typ) at VGS = 10V and 4.4mΩ (Typ) at VGS = 4.5V.

● Advanced Trench Technology

● Provide Excellent RDS(ON) and Low Gate Charge

● Lead free product is acquired

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.


Features

● VDS = 30V, ID =150A

● RDS(ON),2.8 mΩ(Typ) @ VGS =10V

● RDS(ON),4.4mΩ(Typ) @ VGS =4.5V

● Advanced Trench Technology

● Provide Excellent RDS(ON) and Low Gate Charge

● Lead free product is acquired

Applications

● Load Switch

● PWM Application

● Power management



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