Service Hotline
The FDN337N is an N-Channel MOSFET in a compact design with a Vdss of 30V and Id of 2.2A. It features a low RDS(on) of 40mΩ at Vgs 4.5V and Id 2.2A, and a Vgs(th) of 0.9V at 250μA.
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The FDN337N N-Channel Enhancement MOSFET, presented in a compact SOT-23 package, is designed for high-efficiency switching and control in various electronic applications. Its excellent performance metrics, including low on-resistance and substantial drain current capability, make it a versatile component for power management and signal switching.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.






