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Cost-effective FDN337N N-Channel Enhancement MOSFET SOT-23
This N-Channel MOSFET offers 30V Vds, 2.2A Id, and 0.5W Pd, featuring Trench Power LV technology and high-speed switching for efficient, low-power operation.
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Description
This N-Channel MOSFET is designed to deliver high performance in various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V, and a continuous drain current (Id) of 2.2A. With a power dissipation (Pd) rating of 0.5W, this MOSFET provides reliable operation while maintaining low power consumption.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Application
● Battery protection
● Load switch
● Power management
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SL2302 N-Channel Power MOSFET Manufacturer
品牌： slkor，
Shenzhen Kinghelm Electronics Co., Ltd.
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