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Cost-effective FDV305N N-Channel Enhancement MOSFET SOT-23
The FDV305N N-Channel MOSFET in SOT-23 offers 20V Vds, 0.9A Id, low RDS(on), and uses Trench Power LV technology for efficient, reliable switching in compact designs.
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Description
The FDV305N N-Channel Enhancement MOSFET SOT-23 is designed to deliver reliable and efficient switching in a compact package. With a maximum drain-to-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.9A, this MOSFET is engineered to handle moderate power requirements with precision. Its low on-resistance and low gate threshold voltage make it an ideal choice for various electronic applications.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Application
● Battery protection
● Load switch
● Power management
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SL2302 N-Channel Power MOSFET Manufacturer
品牌： slkor，
Shenzhen Kinghelm Electronics Co., Ltd.
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