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The SL160N03Q N-Channel MOSFET in PDFN-8L offers 30V Vds, 160A Id, and low RDS(on) of 1.6mΩ, ideal for high-power switching applications.
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
Description
The SL160N03Q N-Channel Enhancement MOSFET PDFN-8L(5x6) is designed for demanding applications where efficiency and reliability are crucial. This MOSFET boasts a maximum drain-source voltage of 30V and a substantial continuous drain current capability of 160A, making it ideal for high-power switching tasks.
Features
● VDS=30V,ID=160A
● RDS(ON)TYP = 1.6mΩ @VGS =10V
● RDS(ON)TYP = 2.3mΩ @VGS =4.5V
● Very Low On-resistance RDS(ON)
● LowCrss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
Application
● PWM Application
● Load Switch
● Power Management
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.






