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BSS138 N-Channel MOSFET SOT-23, VDS=50V, ID=220mA, PD=225mW, ideal for low-power switching applications.
● Space-saving designs.
● Efficient operation.
● Ideal for small signal switching applications.
Description
The medium-voltage MOSFET BSS138 is an N-channel MOSFET featuring a drain-source voltage (Vdss) of 50 V, a continuous drain current (Id) of 220 mA, and a power dissipation (Pd) of 225 mW. Its on-resistance (RDS(on) @ Vgs, Id) is 3.5 Ω at 10 V, 220 mA, and its threshold voltage (Vgs(th) @ Id) is 1.6 V at 1 mA. The device is offered in an SOT-23 package.
Features
● The drain-source voltage (Vdss) is 50 V, suitable for medium-voltage applications.
● The continuous drain current (Id) is 220 mA, making it appropriate for low-power applications.
● The power dissipation (Pd) is 225 mW, offering good thermal performance.
● The on-resistance (RDS(on) @ Vgs, Id) is 3.5 Ω at 10 V, 220 mA, providing low conduction resistance.
● The threshold voltage (Vgs(th) @ Id) is 1.6 V at 1 mA, enabling operation under low-voltage drive conditions.
Application
The medium-voltage MOSFET BSS138 is suitable for use in switching circuits, power-drive circuits, and other applications in medium-voltage systems. It can also be used in low-voltage, low-power circuits for voltage level shifting, power management, audio amplifiers, and similar applications.
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