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Cost-effective SL2309 P-Channel Power MOSFET SOT-23-3 Manufacturer

SL2309 P-Channel MOSFET in SOT-23-3 package. The series features a 60V drain-source voltage (Vdss), 1.6A continuous drain current (Id), 1.5W power dissipation (Pd), with a 140mΩ on-resistance (RDS(on)) and a 2V threshold voltage (Vgs(th)).

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

General Features

● VDS =-60V,ID =-1.6A RDS(ON) <160m? @ VGS=-10V  RDS(ON) <200m? @ VGS=-4.5V  
● High density cell design for ultra low Rdson  
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

Application
● Load switch  
● PWM application


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