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SL2309 P-Channel MOSFET in SOT-23-3 package. The series features a 60V drain-source voltage (Vdss), 1.6A continuous drain current (Id), 1.5W power dissipation (Pd), with a 140mΩ on-resistance (RDS(on)) and a 2V threshold voltage (Vgs(th)).
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
General Features
● VDS =-60V,ID =-1.6A RDS(ON) <160m? @ VGS=-10V RDS(ON) <200m? @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Load switch
● PWM application
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Longevity
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