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High Reliability S9012 PNP Bipolar Transistor
-500mA|300mW|-0.6V|150MHz|SOT-23|-25V|Triode|Products|-,-,-,-,-,-|Product display|
The S9012 is a versatile PNP bipolar junction transistor (BJT) designed for applications where moderate voltage and current requirements are necessary. Encapsulated in the SOT-23 package, it offers compact size without compromising on performance. With a maximum collector-emitter voltage (VCEO) of -25V and a collector current (IC) rating of -500mA, the S9012 is suitable for low-power circuit designs. It can handle power dissipation (PD) up to 300mW and features a low collector-emitter saturation voltage (VCE(sat)) of -0.6V, ensuring minimal voltage drop during operation. The transistor exhibits a transition frequency (fT) of 150MHz, making it ideal for applications requiring high-frequency response and efficient switching.
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Description:
The S9012 is a versatile PNP bipolar junction transistor (BJT) designed for applications where moderate voltage and current requirements are necessary. Encapsulated in the SOT-23 package, it offers compact size without compromising on performance. With a maximum collector-emitter voltage (VCEO) of -25V and a collector current (IC) rating of -500mA, the S9012 is suitable for low-power circuit designs. It can handle power dissipation (PD) up to 300mW and features a low collector-emitter saturation voltage (VCE(sat)) of -0.6V, ensuring minimal voltage drop during operation. The transistor exhibits a transition frequency (fT) of 150MHz, making it ideal for applications requiring high-frequency response and efficient switching.
Features
● High Collector Current.(IC= -500mA）
● Complementary To S9013.
● Excellent HFE Linearity.
Applications
● High Collector Current.
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