Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    

Description

The chip is manufactured with the silicon epitaxy process, with characteristics such as high power gain, broadband, low noise, low leakage current and small junction capacity; in addition, it has relatively large dynamic ranges and ideal current linear features;

It is largely applied to UHF microwave, and VHF, UHF and CATV low-noise amplifiers with high-frequency broadband, including satellite TV tuners, CATV amplifiers, analog digital portable phones, radar sensor switches, RF modules and relay amplifiers built in the fiber optic transmission system, etc.

Collector-emitter breakdown voltage: BVCEO=12V, maximum collector current: IC=70mA, collector power dissipation: PC=300mW, characteristic frequency: fT=9GHz;

Features

● BVCEO (Collector-Emitter Breakdown Voltage): 12V - Ensures reliable operation under high voltage conditions.
● IC (Collector Current): 70mA - Provides sufficient current for high-frequency amplification.
● fT (Transition Frequency): 9GHz - Supports high-frequency signal processing with minimal loss.
● NF (Noise Figure): 1.6dB - Delivers clear signal amplification with minimal noise.
● IP1dB (Output Power at 1dB Compression Point): 26dBm - Ensures strong and efficient signal output.Package: SOT-23 - Compact and efficient for space-● constrained applications.

Applications

● Communication Systems
● Signal Processing
● Broadcasting
● Radar Systems
● Test Equipment