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Cost-effective BFG540/X RF Power Amplifier SOT-143B

120mA|9GHz|1.9dB|21dBm|SOT-143B|15V|Products|-,-,-,-,-,-|Product display|

Made with the silicon epitaxy technology, the chip has characteristics such as high power gains, low noise factor, wide inversion frequency, low leakage current, gold material leading structure and high reliability;

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.   

Description

● Made with the silicon epitaxy technology, the chip has characteristics such as high power gains, low noise factor, wide inversion frequency, low leakage current, gold material leading structure and high reliability;

● It is mainly applied to products of ultrahigh frequency microwave, VHF, UHF and CATV high frequency broad band low noise amplifiers, such as SATV tuners, CATV amplifiers, analog digital cordless telephone, radar detectors, radio frequency modules and relay amplifiers in optical fiber transmission;

● Collector-emitter breakdown voltage: BVCEO=12V, maximum collector current: IC=120mA, collector wasted power: PC=400mW, characteristic frequency: fT=9GHz;

● The 4-pin (the wide collector pins and the dual-emitter pins) SOT143B surface plastic package is adopted; BFG540 and BFG540/X have the same package forms but different definitions in pins.


Features

● BVCEO (Collector-Emitter Breakdown Voltage): 15V - Guarantees stable performance even in high-voltage environments.
● IC (Collector Current): 120mA - Delivers adequate current to support high-frequency signal amplification.
● fT (Transition Frequency): 9GHz - Ensures high-speed signal processing with minimal distortion.
● NF (Noise Figure): 1.9dB - Provides low noise amplification, maintaining signal clarity.
● IP1dB (Output Power at 1dB Compression Point): 21dBm - Delivers robust output power for efficient signal transmission.
● Package: SOT-143B - Compact and space-efficient, suitable for various applications.


Applications

● RF Communication Systems
● Microwave Devices
● Broadcasting Equipment
● Satellite Communications
● Testing and Measurement

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Longevity

 

The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.

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