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High Reliability SL3N06 N-Channel Power MOSFET SOT-23 Manufacturer

N-Channel MOSFET in SOT-23 package, featuring 60V Vdss, 3A Id, 90mΩ RDS(on), and a 3V gate threshold voltage. Ideal for high-efficiency power switching applications.

● High Current Handling

● Low On-Resistance

● Reliable Switching

MAXIMUM RATINGS

CharacteristicSymbolMaxUnit
Drain-SourceVoltageBVDSS60V
Gate-SourceVoltageVGS20V
DrainCurrent-continuousIDR3A
DrainCurrent-pulsedIDRM10A


THERMAL CHARACTERISTICS

CharacteristicSymbolMaxUnit
Total Device DissipationPD1380mW/℃
TA=25℃
Derate above25℃3.8mW/℃
Thermal Resistance Junction to AmbientRΘJA90℃/W
Junction andStorage TemperatureTJ,Tstg150℃,-55to+150℃



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