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N-Channel MOSFET in SOT-23 package, featuring 60V Vdss, 3A Id, 90mΩ RDS(on), and a 3V gate threshold voltage. Ideal for high-efficiency power switching applications.
● High Current Handling
● Low On-Resistance
● Reliable Switching
MAXIMUM RATINGS
| Characteristic | Symbol | Max | Unit |
| Drain-SourceVoltage | BVDSS | 60 | V |
| Gate-SourceVoltage | VGS | 20 | V |
| DrainCurrent-continuous | IDR | 3 | A |
| DrainCurrent-pulsed | IDRM | 10 | A |
THERMAL CHARACTERISTICS
| Characteristic | Symbol | Max | Unit |
| Total Device Dissipation | PD | 1380 | mW/℃ |
| TA=25℃ | |||
| Derate above25℃ | 3.8 | mW/℃ | |
| Thermal Resistance Junction to Ambient | RΘJA | 90 | ℃/W |
| Junction andStorage Temperature | TJ,Tstg | 150℃,-55to+150℃ | |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.





