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N-Channel MOSFET in TO-220 package, featuring 60V Vdss, 60A Id, 110W Pd, 11.5mΩ RDS(on), and 4V Vgs(th). The series offers high-efficiency solutions for high-current, medium-voltage switching applications.
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
N-Channel Power MOSFET
General Features
● VDS =60V.ID =60A
RDS(ON)<11.5mΩ VGS=10V (Typ:9.1mQ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.





