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N-Channel MOSFET in TO-252 package, featuring 60V Vdss, 17A Id, 25W Pd, 75mΩ RDS(ON), and 2.5V Vgs(th). The series offers high-performance solutions for medium-power switching applications.
● Improved dv/dt capability
● High density cell design for ultra low Rdson
● Excellent package for good heat dissipation
N-Channel Power MOSFET
General Features
● VDS =60V. ID =17A
RDS(ON)<75 mΩ VGS=10V
RDS(ON)<90 mΩ@VGS=4.5V
● Improved dv/dt capability
● High density cell design for ultra low Rdson
● Good stability and uniformity with high EAs
● Excellent package for good heat dissipation
Applications
● Power switching application
● Hard switched and high frequency circuits
● Motor drive
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.





