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N-Channel MOSFET in SOT-223 package, featuring 100V Vdss, 10A Id, 95mΩ RDS(on) at 10V VGS, and 3V Vgs(th). Ideal for efficient power switching in medium-to-high current applications.
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(on)
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
| VDS | 100 | V |
| RDS(ON)@10V,MAX | 95 | m |
| ID | 10 | A |
FEATURES
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(on)
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.





