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Cost-effective SL11P06DN1 P-Channel Power MOSFET TO-252 Reliable Factory

P-Channel MOSFET in TO-252 package, featuring 60V Vdss, 11A Id, 15.3W Pd, 175mΩ RDS(on), and 2.5V Vgs(th). The series provides efficient solutions for medium-power, low-voltage switching applications.

● Improved dv/dt capability

● High density cell design for ultra low Rdson

● Good stability and uniformity with high EAS

N-Channel Power MOSFET


General Features

● VDS =-60V. ID =11A

   RDS(ON)<175 mΩ VGS=-10V

   RDS(ON)<210 mΩ@VGS=-4.5V

● Improved dv/dt capability

● High density cell design for ultra low Rdson

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation


Applications

● Power switching application

● Hard switched and high frequency circuits

● LED Lighting


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