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N-Channel MOSFET in TO-220F package, featuring 500V Vdss, 18A Id, 0.32Ω RDS(on), with a 4V gate threshold and 60W power dissipation. Suitable for efficient power switching.
● 100% Avalanche Tested
● Fast Switching
● Improved dv/dt Capability
Features:
● 18.0A, 500V, RDS(on)(Typ) =0.25Ω@VGS=10V
● Low Gate Charge
● Low Crss
● 100% Avalanche Tested
● Fast Switching
● Improved dv/dt Capability
● Application:
● High Frequency Switching Mode Power Supply
● Active Power Factor Correction
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.









