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N-Channel MOSFET in TO-247 package, featuring 1000V Vdss, 12A Id, 1.0Ω RDS(on), with a 5.0V gate threshold, and 272W power dissipation. Suitable for high-power switching applications.
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
Features
● Low gate charge
● Low Crss (typ 13pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
● RoHS product
Application
● High frequency switching mode power supply
● Electronic ballast based on half bridge
● LED power supplies
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.








