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SL11N65CD N-channel Power MOSFET TO-252

N-Channel MOSFET, featuring 650V Vdss, 11A Id, 318mΩ RDS(on), with a 4.5V gate threshold, and 87W power dissipation. Suitable for high-efficiency power switching.

● Fast switching

● 100% avalanche tested

● Improved dv/dt capability

Description

●This Power MOSFET is produced using Slkor's Advanced Super junction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,and with stand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switched mode power supplies.


Features

● 11A,650V,RDS(on)typ=0.318Ω@VGS=10V

● Low gate charge(typical 15.5nC)

● High ruggedness

● Fast switching

● 100% avalanche tested

● Improved dv/dt capability







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