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AOD409 P-channel Power MOSFET TO-252
P-Channel MOSFET in TO-220 package, featuring -60V Vdss, -30A Id, 30mΩ RDS(ON), with a -1.8V gate threshold, and 80W maximum power dissipation (Pd). Suitable for high-current, efficient power switching in negative voltage applications.
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Features
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● PWM applications
● Power management
● Load switch
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Shenzhen Kinghelm Electronics Co., Ltd.
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