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P-Channel MOSFET in TO-252 package, featuring -60V Vdss, -30A Id, 26mΩ RDS(on), -1.8V Vgs(th), and 50W Pd. The series offers efficient solutions for high-power, low-voltage switching applications.
● Green device available.
● Advanced high cell denity trench technology for ultra RDS(ON).
● Excellent package for good heat dissipation.
Our advantages:
China's manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. Slkor semiconductor electronic components can fully replace those of major international brands in 99% of applications without the need for testing verification.
Slkor alternative equivalents for Infineon:
| Infineon | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| IRF640NPBF | IRF640 | MOSFET | TO-220 |
| IRFR5305TRPBF | IRFR5305 | MOSFET | TO-252 |
| TLE4275 | SL4275 | LDO | TO-252 |
| TLE4284 | SL4284 | LDO | TO-252 |
| TLF4949 | SL4949 | LDO | SOP-8 |
| TLE42754G | SL4275-G | LDO | TO-263-5 |
| TLE4264 | SL4264-2 | LDO | SOT-223 |
| TLE42744 | SL42744D | LDO | TO-252-3 |
| TLE42764 | SL42764 | LDO | TO-252-5 |
| BCR401 | SL401 | Gate Driver IC | SOT-23 |
| BTS3405G | SL3405S | Smart Power Switches | SOP-8 |
| TLE4264 | SL4264-2 | Zener Diode | SOT-223 |
| TLE8366 | SL8366 | DC-DC Regulator | ESOP-8 |
| IR21814/IRS21814 | SL21814 | Gate Driver IC | SOP-14 |
| IR2110S | SL2110 | Gate Driver IC | SOP-16W |
| IRS2003S | SL2003 | Gate Driver IC | SOP-8 |
| IRS2004 | SL2004 | Gate Driver IC | SOP-8 |
| IR2103S | SL2103 | Gate Driver IC | SOP-8 |
Description :
This p-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. it can be used in a wide variety of applications.
Features :
● Vs=-60V,l=-30A,RDS(ON)<35m Ω @VGS=-10V
● Low gate charge.
● Green device available.
● Advanced high cell denity trench technology for ultra RDS(ON).
● Excellent package for good heat dissipation.
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.





