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N-Channel MOSFET in TO-3PH package, featuring 1000V Vdss, 5A Id, 4.2Ω RDS(on), with a 3.5V gate threshold, and 48W power dissipation. Ideal for high-voltage power applications.
● Extremely high dv/dt capability
● 100% avalanche tested
● Gate charge minimized
Features:
● Extremely high dv/dt capability
● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
● Very good manufacturing repeatibility
Applications:
● Switching application
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.








