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N-Channel MOSFET, featuring 1500V Vdss, 9A Id, 2.9Ω RDS(on), with a 4V gate threshold, and 350W power dissipation. Ideal for high-voltage, high-power applications.
● Avalanche ruggedness
● Gate charge minimized
● Very low intrinsic capacitances
Features
● 100% avalanche tested
● Avalanche ruggedness
● Gate charge minimized
● Very low intrinsic capacitances
● High speed switching
● Very low on-resistance
Application
● Welder
● UPS
● PV Inverter
● Switching applications
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.








