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SL18N20 N-channel Power MOSFET TO-220-3L
N-Channel MOSFET, featuring 200V Vdss, 18A Id, 120mΩ RDS(on), with a 3.0V gate threshold, and 104W power dissipation. Suitable for high-performance power switching.
● High Current Handling
● High Voltage Capability
● Low On-Resistance & High Power Dissipation
Description
● The SL18N20 is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Features
● VDS= 200V ID=18A
● RDS(ON)< 150mΩ@ VGS=10V （Type：120mΩ）
Application
● Uninterruptible Power Supply(UPS)
● Power Factor Correction (PFC)
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The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
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