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N-channel MOSFET in TO-220F package, featuring 650V Vdss, 11A Id, 318mΩ RDS(on), with a 4.5V gate threshold, and 28W power dissipation. Suitable for high-performance power management applications.
● High ruggedness
● Fast switching
● 100% avalanche tested
Description
●This Power MOSFET is produced using Slkor's advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode.These devices are well suited for AC/DC power conversion In switching mode operation for high erefficiency.
Features
● 11A, 650V, RDS(on)max=380mΩ@VGS=10V
● Low gate charge(typical15.5nC)
● High ruggedness
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.








