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N-Channel MOSFETs in TO-252 packages, featuring a Vdss of 500V, Id of 5A, RDS(on) of 1.5Ω, Vgs(th) of 3.5V, and Pd of 98.4W. The series is designed for efficient power management in high-voltage applications.
● Gate Charge (Typical 18.5nC)
● Improved dv/dt Capability
● 100% Avalanche Tested
FEATURES
● RDS(ON)(Max 1.5Ω) @VGS=10V
● Gate Charge (Typical 18.5nC)
● Improved dv/dt Capability
● 100% Avalanche Tested
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.








