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N-Channel MOSFET in TO-220F package, featuring 650V Vdss, 8A Id, 30W Pd, 1.1Ω RDS(ON), and a 2V gate threshold. Suitable for efficient high-voltage power switching applications
● Fast Switching
● Low ON Resistance
● Low Gate Charge
Description
Our N-Channel MOSFET is engineered to provide robust performance in high-voltage environments. With a maximum drain-source voltage of 650V, it is well-suited for high-voltage switching applications. The device features a low on-resistance of 1.1Ω (at Vgs = 10V and Id = 3.5A), ensuring minimal power loss and efficient operation. Additionally, it has a total power dissipation capability of 30W, allowing it to handle significant power without overheating.
Features
● Fast Switching
● Low ON Resistance
● Low Gate Charge
● 100% Single Pulse avalanche energy Test
Application
● Power Supply Circuits: Efficient switching in power converters and regulators.
● Motor Drives: Reliable control of DC motors in industrial and consumer electronics.
● Switching Regulators: High-efficiency performance in step-up and step-down converters.
● Inverter Systems: Suitable for photovoltaic and uninterruptible power supply (UPS) systems.
● Lighting Control: Effective for switching and dimming applications in LED lighting systems.
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.








